Grenoble, France

• E-MRS 2010 talk
  
• The MUSCADE project
  
• GreenDFT Pdoc (filled)
  
• GreenDFT PhD (filled)
  

Research interests Driven alloys / Point defect engineering Semiconductors (Si, Ge) Diluted Magnetic semiconductors (GeMn) Fullerenes and Nanotubes (SiC, BN, B) Ab initio calculations and Lattice Kinetic Monte Carlo

Short CV since 2004 Research staff at the CEA-INAC, Grenoble 1998-2003 Research staff at the CEA-DRMN, Dijon 1997 PhD thesis (Lille University, France) 1992 Graduate from the "ENS de Chimie de Lille"

Scientific publications (Full list)

Thematic list:

• 
  Interstitial diffusion in Si
  Semiconductors
  • Point defect engineering strategies to suppress A-center formation in silicon
    A. Chroneos, C. A. Londos, E. N. Sgourou and P. Pochet
    Appl. Phys. Lett., 99, 241901 (2011). [ref]
  • Vacancy-mediated diffusion in biaxially strained Si
    D. Caliste, K. Z. Rushchanskii, P. Pochet
    Appl. Phys. Lett., 98, 031908 (2011). [ref]
  • Evidence of the Ge non reactivity during the initial stage of SiGe oxidation
    A. Dkhissi, A. K. Upadhyay, A. Hemeryck, A. Esteve, G. Landa, P. Pochet, M. Djafari Rouhani
    Appl. Phys. Lett., 94, 041912 (2009). [ref]
  • Stress enhanced self-diffusion in Si: Entropy effect in anisotropic elastic environment
    K. Z. Rushchanskii, P. Pochet, F. Lancon
    Appl. Phys. Lett., 92, 152110 (2008). [ref]
  • Germanium diffusion mechanisms in silicon from first principles
    D. Caliste, P. Pochet, T. Deutsch, F. Lancon
    Phys. Rev. B 75, 125203 (2007). [ref]
  • Vacancy-Assisted Diffusion in Silicon: A Three-Temperature-Regime Model
    D. Caliste, P. Pochet
    Phys. Rev. Lett. 97, 135901 (2006). [ref]
• 
  MnGe₂ C₁₆ phase
  Spintronics
  • X-ray magnetic circular dichroism in GeMn compounds
    S. Tardif, A. Titov, E. Arras, I. Slipukhina, E. Hlil, S. Cherifi, Y. Joly, M. Jamet, A. Barski, J. Cibert, E. Kulatov, Yu. A. Uspenskii and P. Pochet
    To be submitted to Phys. Rev. B (2011)
  • Interface-driven phase separation in multifunctional materials: The case of the ferromagnetic semiconductor GeMn
    Arras,E. Slipukhina,I. Prestat,E. Rovezzi,M. Tardif,S. Titov,A. Lancon,F. Bayle-Guillemaud, P. d'Acapito,F. Barski,A. Favre-Nicolin,V. Jamet,M. Cibert,J. Pochet,P.
    Submitted to Phys. Rev. B (2011)
  • Control of the magnetic properties of epitaxial Mn5Ge3Cx films induced by carbon doping
    Spiesser A., Slipukhina I., Dau T., Arras E., Le Thanh V., Michez, L., Pochet P., Saito H., Yuasa S., Jamet M., Derrien,J
    Phys. Rev. B 84, 165203 (2011) [ref]
  • Phase diagram, structure, and magnetic properties of the Ge-Mn system: A first-principles study
    E. Arras, D. Caliste, T. Deutsch, F. Lancon, P. Pochet
    Phys. Rev. B 83, 174103 (2011) [ref]
  • Strain and correlation of self-organized GeMn nanocolumns embedded in Ge (001)
    S. Tardif, V. Favre-Nicolin, F. Lançon, E. Arras, M. Jamet, A. Barski, C. Porret, P. Bayle-Guillemaud, P. Pochet, T. Devillers, M. Rovezzi
    Phys. Rev. B 82, 104101 (2010) [ref]
  • First principles prediction of the metastability of the Ge2Mn phase and its synthesis pathways
    E. Arras, I. Slipukhina, M. Torrent, D. Caliste, T. Deutsch, P. Pochet
    Appl. Phys. Lett., 96, 231904 (2010). [ref]
  • Simulation of the enhanced Curie temperature in Mn5Ge3Cx compounds
    I. Slipukhina, E. Arras, Ph. Mavropoulous, P. Pochet
    Appl. Phys. Lett., 94, 192505 (2009). [ref]
  • Atomic structure of Mn-rich nanocolumns probed by x-ray absorption spectroscopy
    M. Rovezzi, T. Devillers, E. Arras , F. d'Acapito, A. Barski, M. Jamet, P. Pochet
    Appl. Phys. Lett., 92, 242510 (2008). [ref]
• 
  new SiC cage
  Nanostructures
  • First-principles stability of sp2-like SiC nanostructures
    E. Machado-charry, E. Mehes, L. Genovese, and P. Pochet
    To be submitted to J. Comput. Theor. Nanosci. (2011)
  • Optimized energy landscape exploration using the ab initio based ART-nouveau
    E. Machado-Charry, L. K. Beland, D. Caliste, L. Genovese,T. Deutsch, N. Mousseau and P. Pochet
    J. Chem. Phys. 135, 034102 (2011) [ref]
  • Energy landscape of fullerene materials: A comparison between boron, boron-nitride and carbon
    De, Sandip; Willand,Alexander; Amsler,Maximilian; Pochet, Pascal; Genovese, Luigi; Goedecker, Stefan
    Phys. Rev. Lett. 106, 225502 (2011). [ref]
  • Low-energy boron fullerenes: Role of disorder and potential synthesis pathways
    P. Pochet, L. Genovese, S. De, G. Goedecker, D. Caliste, G. S. Alireza, K. Bao, and T. Deutsch
    Phys. Rev. B 83, 081403(R) (2011). [ref]
  • First-principles prediction of stable SiC cage structures and their synthesis pathways
    P. Pochet, L. Genovese, D. Caliste, I. Rousseau, S. Goedecker,T. Deutsch
    Phys. Rev. B 82, 035431 (2010). [ref]

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