Aurélien Lherbier
Laboratoire des technologies de la microélectronique (LTM)

Atomistic Simulation Laboratory (L_Sim)

Institut Nanosciences et Cryogénie(INAC)
SP2M/L_Sim, CEA cedex 9, 38054 Grenoble, France
04.38.78.38.07
04.38.78.51.97
aurelien.lherbier uclouvain.be
www CEA / DSM / INAC / SP2M / L_Sim

Scientific publications

Illustration:

(a)

(b)

(c)

(d)

From top to bottom:
(a) Visualization of silicon nanowire passivated with hydrogen.
(b) Modelization of surface roughness of a silicon nanowire.
(c)(d) Visualizations of a nanowire surrounded by a dielectric (SiO2) and a gate-all-around. Also are plotted the isosurfaces of electrostatic potential produce by dopants in substitution in the silicon matrix. (All Images are obtained with V_sim )

Research interests

Electronic and Transport properties of semiconductor nanowires and 2D graphene plane
Electronic properties
Tight-binding models :
  • Electrostatic, Dielectric and Quantum Confinement properties of semiconductor nanowires
  • Codes development in TB_Sim

Transport properties
Kubo formalism, real space method :
  • Conductance, Mean-free path, Carrier Mobility
  • Quantum Interferences, Localization phenomena

CV

Since Nov. 2005: PhD Thesis on the transport properties of semiconductor nanowires and 2D graphene plane at CNRS/LTM and CEA/INAC/SP2M/L_Sim

Feb-Jun 2005: Training at CEA/INAC/SP2M/L_Sim on the electronic properties of semiconductor nanowires

2005: Master 2 Research :   Physics of Condensed Matter and radiation  

Scientific publications

Full list of publications

Dernières modifications : lundi 4 février 2008   /   Last modified: Monday 4 February 2008
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