From top to bottom:
(a) Visualization of silicon nanowire passivated with hydrogen.
(b) Modelization of surface roughness of a silicon nanowire.
(c)(d) Visualizations of a nanowire surrounded by a dielectric (SiO2) and a gate-all-around. Also are plotted the isosurfaces of electrostatic potential produce by dopants in substitution in the silicon matrix.
(All Images are obtained with
V_sim )