Multiscale atomistic simulation of oxidation, stress and diffusion processes in SiGe
SiGe alloy is being used more and more in the semi-conductor industry for nano-device fabrication, especially in thin layers (a few nanometers). The small size of those films brings to light new physical phenomena which are over the scope of traditional simulation tools. Thus, new phenomenological models are needed in order to progress towards miniaturization.
The goal of this project is to supply the technology engineers with the appropriate numerical models so that they will be able to control the manufacturing steps concerned with the oxidation, the implantation, or the thermal annealing of these SiGe nano-devices. These models will be designed using state-of-art atomistic simulation tools (ab initio calculation, molecular dynamics and kinetic Monte Carlo simulations) and will be checked by comparison with experimental results. The implementation of these models in industrial simulation tools will be the final step of the project.
Contributors
The project is based on 5 contributors:
- Dr. Pascal Pochet, Project Co-ordinator, atomistic simulation Lab. (L_Sim) au CEA, Grenoble;
- Prof. Mehdi Djafari-Rouhani, Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), Toulouse ;
- Dr. Guy Tréglia, Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Marseille;
- Dr. Philippe Blaise, Laboratoire de Simulation et Caractérisation des Procédés (LSCDP) au CEA-Leti, Grenoble;
- Dr. Hervé Jaouen, Crolles modeling department STmicroelectronics (ST) Crolles.
Fifth meeting
Marseille (April 20-21th, 2009)
Fourth meeting
Carcassonne (September 8-9th 2008)
Third meeting
Grenoble (December 5-6th 2007)
Poster at J3N
Paris (Septembre 25-27th 2007)
Second meeting
Marseille (April 26-27th, 2007)
Poster at J3N
Besançon (November 6-8th, 2006)
First meeting
St Bertrand de Comminges (September 26-27th, 2006)
Kick-off meeting
Col de Porte (January 18th, 2006)
